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41.
谈物理实验教学中学生科学素质的培养 总被引:3,自引:0,他引:3
物理教学要实现由“应试教育”向素质教育的转轨,必须改单纯的“学科教育”为“科学教育”,即不仅要让学生掌握必要的物理知识,还要为学生的整体素质发展奠定必需的科学能力和科学品质的基础.笔者通过多年的教学实践和研究深刻地认识到,在物理教学中,加强实验教学是培养学生科学素质的重要途径和关键,也是物理学科实施素质教育的一个十分重要的方面. 相似文献
42.
The present paper devotes to the long-time behavior of a class of reaction diffusion equations with delays under Dirichlet boundary conditions. The stability and global attractability for the zero solution are provided, and the existence, stability and attractability for the positive stationary solution are also obtained. 相似文献
43.
Guofen Yu Yuanci Gao Shenggang Liu Wenxiang Wang Jin Wu 《International Journal of Infrared and Millimeter Waves》2002,23(8):1261-1269
Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources. 相似文献
44.
The existence and uniqueness of classical global solutions to a type of Boussinesq equations with initial and boundary values are studied in this paper. The existence of such solutions is proved by means of compactness theorem and Schauders fixed point theorem, and its uniqueness by the so called energy method.Projects Supported by the Science Fund of the Chinese Academy of Sciences. 相似文献
45.
采用甚高频等离子体增强化学气相沉积技术制备了系列微晶硅薄膜太阳电池,指出了气体总流量和背反射电极的类型对电池性能参数的影响.电池的I-V测试结果表明:随反应气体总流量的增加,对应电池的短路电流密度、开路电压和填充因子都有很大程度的提高,结果使得电池的光电转换效率得以提高.另外,ZnO/Ag/Al背反射电极能明显提高电池的短路电流密度,进而也提高了电池的光电转换效率.对气体总流量和背反射电极类型影响电池效率的原因进行了分析.
关键词:
微晶硅薄膜太阳电池
气体流量
ZnO/Ag/Al背反射电极 相似文献
46.
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48.
Weidong Gao Meiqiong Zhan Shuhai Fan Janda Shao Zheng-Xiu Fan 《Applied Surface Science》2005,250(1-4):195-202
The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser. 相似文献
49.
Hong-Wen Gao 《Journal of Analytical Chemistry》2003,58(4):328-332
The reactions between Cu(II) and picramine CA (PCA) and Al(III) and PCA were both sensitive at pH 7. The competition coordination between Cu and the Al–PCA complex was applied to the selective determination of Cu (CCSD) by the spectral correction technique. Results have shown that the complexes formed at pH 7 are Al2(PCA) and Cu(PCA)3, their cumulative stability constants are 4.43 × 105 and 2.08 × 1015, respectively, and their real molar absorptivities are 5.78 × 103 at 650 nm and 3.19 × 104at 530 nm. At the analysis of the samples, the relative standard deviation (RSD) was 5.0% and the recovery rate of Cu was between 94 and 108%. 相似文献
50.
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature 下载免费PDF全文
Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献